TY - GEN
T1 - A 69 μw CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from -50°C to 150°C
AU - Lee, Sheng Cheng
AU - Chiueh, Her-Ming
PY - 2012/12/1
Y1 - 2012/12/1
N2 - A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.
AB - A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.
UR - http://www.scopus.com/inward/record.url?scp=84873966737&partnerID=8YFLogxK
U2 - 10.1109/ICSENS.2012.6411595
DO - 10.1109/ICSENS.2012.6411595
M3 - Conference contribution
AN - SCOPUS:84873966737
SN - 9781457717659
T3 - Proceedings of IEEE Sensors
BT - IEEE SENSORS 2012 - Proceedings
Y2 - 28 October 2012 through 31 October 2012
ER -