A 69 μw CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from -50°C to 150°C

Sheng Cheng Lee; Her-Ming Chiueh

doi:10.1109/ICSENS.2012.6411595

A 69 μw CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from -50°C to 150°C

Sheng Cheng Lee^*, Her-Ming Chiueh

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm², is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.

Original language	English
Title of host publication	IEEE SENSORS 2012 - Proceedings
DOIs	https://doi.org/10.1109/ICSENS.2012.6411595
State	Published - 1 Dec 2012
Event	11th IEEE SENSORS 2012 Conference - Taipei, Taiwan Duration: 28 Oct 2012 → 31 Oct 2012

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	11th IEEE SENSORS 2012 Conference
Country	Taiwan
City	Taipei
Period	28/10/12 → 31/10/12

Access to Document

10.1109/ICSENS.2012.6411595

Link to publication in Scopus

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title = "A 69 μw CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from -50°C to 150°C",

abstract = "A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.",

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AB - A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.

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