A 69 μw CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from -50°C to 150°C

Sheng Cheng Lee*, Her-Ming Chiueh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A proposed temperature sensor is based on pure CMOS PTAT circuitry, a preamplifier and a sigma delta ADC capable of simple and efficient temperature sensor conversion to digital value. The designed PTAT circuit utilized temperature compensation technology to enhance the linearity. The temperature sensor, which occupies 0.475 mm2, is fabricated using the TSMC 0.18 μm one-poly six-metal (1P6M) process. Measurement results show that the senor consume 46uA with a 1.5 V supply at 100 sample/s at room temperature. The sensor operates from -50°C to 150°C, archiving a 3σ resolution of ±0.8°C.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
StatePublished - 1 Dec 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 28 Oct 201231 Oct 2012

Publication series

NameProceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period28/10/1231/10/12

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