A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive G m -enhancement

Ning Yi Wang*, Hao Wu, Jenny Yi Chun Liu, Jianhua Lu, Hsieh Hung Hsieh, Po Yi Wu, Chewnpu Jou, Mau-Chung Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive g m -enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm 2 and draws 34mA from 1V supply.

Original languageEnglish
Title of host publication2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011 - Digest of Papers
DOIs
StatePublished - 1 Aug 2011
Event2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011 - Baltimore, MD, United States
Duration: 5 Jun 20117 Jun 2011

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011
CountryUnited States
CityBaltimore, MD
Period5/06/117/06/11

Keywords

  • 60GHz
  • CMOS integrated receiver
  • low-noise high-gain amplifier
  • mixer
  • transformer
  • two-dimensional g -enhancement
  • V-band

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