A 52-75 GHz frequency quadrupler in 0.25-μm SiGe BiCMOS process

Nai Chung Kuo*, Zuo-Min Tsai , Klaus Schmalz, Johann Christoph Scheytt, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

This paper presents a single-stage V-band quadrupler in 0.25-μm SiGe BiCMOS technology with an outstanding 36% bandwidth from 52 to 75 GHz. The quadrupler generates -10 dBm output power with 11.7 mW dc consumption and outmatches the reported results in overall efficiency when used in the design of LO chains with buffer amplifiers. In measurement, two approaches are adapted in favor of maximum output power and bandwidth.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2010
Subtitle of host publicationConnecting the World, EuMIC 2010 - Conference Proceedings
Pages365-368
Number of pages4
StatePublished - 6 Dec 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC 2010 - Paris, France
Duration: 26 Sep 20101 Oct 2010

Publication series

NameEuropean Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Conference

Conference13th European Microwave Week 2010: Connecting the World, EuMIC 2010
CountryFrance
CityParis
Period26/09/101/10/10

Keywords

  • Frequency multiplier
  • Millimeter-wave
  • Quadrupler
  • SiGe
  • V-band

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