Abstract
A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured Psat of 13.8 dBm, P1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under VDD biased at 1.8 V. When V DD is biased at 3 V, it exhibits Psat of 18 dBm, P 1 dB of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0.66 × 0.5 mm2. To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
Original language | English |
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Article number | 4729665 |
Pages (from-to) | 45-47 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 19 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2009 |
Keywords
- 60 GHz
- Broadband
- CMOS
- Microwave monolithic integrated circuit (MMIC)
- Power amplifier (PA)
- V-band