A 5 GHz RFIC single chip solution in GaInP/GaAs HBT technology

Chin-Chun Meng*, Tzung Han Wu

*Corresponding author for this work

Research output: Contribution to specialist publicationArticle

9 Scopus citations


Several high performance GaInPIGaAs heterojunction bipolar transistor (HBT) radio frequency integrated circuits (RFIC) implemented by our research group are reviewed in this article. These demonstrated RFICs include source inductively degenerated cascode low noise amplifiers with inter-stage matching, shunt-series shunt-shunt dual-feedback wideband amplifiers, a broadband Gilbert down-conversion micromixer, Gilbert down-conversion mixers with polyphase filters for image rejection, a dual-conversion Weaver receiver, Gilbert up-conversion mixers with output LC current mirror and quadrature VCOs.

Original languageEnglish
Number of pages11
Specialist publicationMicrowave Journal
StatePublished - 1 Feb 2008

Fingerprint Dive into the research topics of 'A 5 GHz RFIC single chip solution in GaInP/GaAs HBT technology'. Together they form a unique fingerprint.

  • Cite this