A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS

Chang Tsung Fu*, Stewart S. Taylor, Chien-Nan Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm2. 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.

Original languageEnglish
Title of host publicationProceedings of the 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
Pages317-320
Number of pages4
DOIs
StatePublished - 22 Sep 2008
Event2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 - Atlanta, GA, United States
Duration: 15 Jun 200817 Jun 2008

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
CountryUnited States
CityAtlanta, GA
Period15/06/0817/06/08

Keywords

  • RF switch
  • T/R switch
  • Time division multiplexing
  • Wireless LAN

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