A 4-Mb nand EEPROM with Tight Programmed Vt Distribution

Masaki Momobomi, Tomoharu Tanaka, Yoshihisa Iwata, Yoshiyuki Tanaka, Hideko Oodaira, Yasuo Itoh, Shirota Riichiro, Kazunori Ohuchi, Fujio Masuoka

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


This paper describes a 5-V-only 4-Mb (512K×8 b) nand EEPROM with tight programmed threshold voltage (Vt) distribution, controlled by a novel program verify technique. A tight programmed Vt distribution width of 0.8 V for the 4-Mb cell array is achieved. By introducing a compact row-decoder circuit, the die size of 7.28 mm × 15.31 mm is accomplished using 1.0-pm design rules. A unique twin p-well structure has made it possible to realize low-power 5-V-only erase/program operation easily and 100K cycle endurance.

Original languageEnglish
Pages (from-to)492-496
Number of pages5
JournalIEEE Journal of Solid-State Circuits
Issue number4
StatePublished - 1 Jan 1991

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