A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing

Meng Fan Chang*, Chien Chen Lin, Albert Lee, Yen Ning Chiang, Chia Chen Kuo, Geng Hau Yang, Hsiang Jen Tsai, Tien-Fu Chen, Shyh Shyuan Sheu

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Existing nonvolatile ternary content-addressablememory (nvTCAM) suffers from limited word-length (WDL), large write-energy (EW) and search-energy (ES), and large cell area (A). This paper develops a 3T1R nvTCAM cell using a single multiple-level cell (MLC)-resistive RAM (ReRAM) device to achieve longWDL, lower EW and ES, and reduced cell area. Two peripheral control schemes were developed, dual-replica-row selftimed and invalid-entry power consumption suppression (IEPCS), for the suppression of dc current in 3T1R nvTCAM cells in order to reduce ES. Two versions of the IEPCS scheme were developed (basic and charge-recycle-controlled) to alter the tradeoff between area overhead and power consumption in the updating of invalid-bits. A 128 b × 64 b 3T1R nvTCAM macro was fabricated using back-end-of-line ReRAM under 90-nm CMOS process. The fabricated MLC-based 3T1R nvTCAM macro achieved sub-1-ns search-delay and sub-6-ns wake-up time with supply voltage of 1 V and WDL = 64 b.

Original languageEnglish
Article number7894184
Pages (from-to)1664-1679
Number of pages16
JournalIEEE Journal of Solid-State Circuits
Volume52
Issue number6
DOIs
StatePublished - 1 Jun 2017

Keywords

  • Nonvolatile memory (NVM)
  • nonvolatile ternary content-addressable-memory (nvTCAM)
  • resistive RAM (ReRAM)
  • TCAM

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    Chang, M. F., Lin, C. C., Lee, A., Chiang, Y. N., Kuo, C. C., Yang, G. H., Tsai, H. J., Chen, T-F., & Sheu, S. S. (2017). A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data Processing. IEEE Journal of Solid-State Circuits, 52(6), 1664-1679. [7894184]. https://doi.org/10.1109/JSSC.2017.2681458