A 38 GHz low-loss reflection-type phase shifter

Lin Yi Huang, Yu Ting Lin, Chien-Nan Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A differential millimeter-wave reflection-type phase shifter is designed at 38 GHz in 90 nm CMOS technology. The measured data shows that the phase shift is tunable up to 161 degrees by voltage control from 0 to 2 V. The insertion loss is compensated by adding a cross-coupled transistor pair, achieving a very low level of 1.45±0.35 dB over the entire phase tuning range. The circuit consumes dc power of 9.6 mW.

Original languageEnglish
Title of host publicationSiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-56
Number of pages3
ISBN (Electronic)9781509052363
DOIs
StatePublished - 8 Mar 2017
Event17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 - Phoenix, United States
Duration: 15 Jan 201718 Jan 2017

Publication series

NameSiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Conference

Conference17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017
CountryUnited States
CityPhoenix
Period15/01/1718/01/17

Keywords

  • CMOS 90nm
  • cross couple pair
  • phase shifter
  • RTPS

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