A 310-340-GHz Coupled-Line Voltage-Controlled Oscillator Based on 0.25-μm InP HBT Technology

Daekeun Yoon, Jongwon Yun, Jae Sung Rieh

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

A THz voltage-controlled oscillator (VCO) has been developed in this work based on a 0.25-μm InP heterojunction bipolar transistor (HBT) technology. The cross-coupled push-push oscillator adopted a novel coupled-line topology, in which the DC blocking capacitors and the load inductance are replaced by a pair of coupled-lines to improve the oscillation frequency and reduce the circuit area. Also, a base bias tuning was employed for effective oscillation frequency tuning. The circuit exhibited the voltage tuning from 309.5 GHz to 339.5 GHz, leading to a tuning range of 30 GHz. The maximum output power was-6.5 dBm at 334 GHz, achieved with a dc power consumption of 13.5 mW. Measured phase noise was-86.55 at 10-MHz offset. The circuit occupies only 0.014 mm2 excluding the probing pads.

Original languageEnglish
Article number7137691
Pages (from-to)652-654
Number of pages3
JournalIEEE Transactions on Terahertz Science and Technology
Volume5
Issue number4
DOIs
StatePublished - 1 Jul 2015

Keywords

  • Frequency control
  • heterjunction bipolar transistor (HBT)
  • Voltage-controlled oscillators (VCOs)

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