A 3-phase AC-AC matrix converter GaN chipset with drive-by-microwave technology

Shuichi Nagai*, Yasuhiro Yamada, Noboru Negoro, Hiroyuki Handa, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

This paper describes an ultracompact GaN 3 × 3 matrix power converter with drive-by-microwave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with co-integrated RF rectifiers, novel isolated dividing couplers in a printed circuit board to reduce complicated gate lines, and low-consumption GaN/Si DBM gate driver on a chip that controls nine bi-directional power switches. The proposed 4.0-kW GaN 3 × 3 matrix power converter is extremely compact, measuring only 18 × 25 mm due to the use of GaN-GIT power device integration technology and DBM technology that provides isolated gate signals by microwave wireless power transmission and eliminates the need for photo-couplers and isolated power supplies. The GaN/Si DBM driver realizes low power consumption of only 2.0 W as a result of gate power sharing with three RF oscillators. The sequential switching operation by the fabricated GaN 3× 3 matrix converter was successfully achieved.

Original languageEnglish
Article number2364307
Pages (from-to)7-14
Number of pages8
JournalIEEE Journal of the Electron Devices Society
Volume3
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • Gallium nitride
  • driver circuits
  • matrix power converter
  • microwave circuits
  • power integrated circuits
  • power semiconductor switches

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