A 290-GHz CMOS heterodyne integrated imager

Dae Keun Yoon, Jungsoo Kim, Jae Sung Rieh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz1/2 were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.

Original languageEnglish
Title of host publicationRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509012350
DOIs
StatePublished - 27 Sep 2016
Event2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan
Duration: 24 Aug 201626 Aug 2016

Publication series

NameRFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Conference

Conference2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
CountryTaiwan
CityTaipei
Period24/08/1626/08/16

Keywords

  • CMOS
  • CMOS integrated circuit
  • imaging
  • receivers

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