A 2.5 Gbps CMOS laser diode driver with preemphasis technique

Guo Cheng Chen, Wei-Zen Chen, Ren Hong Luo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper describes the design of a 2.5 Gbps laser diode (LD) driver circuit in a 0.35μm digital CMOS process. The LD driver delivers a biased current range from 5 to 10 mA and a modulation current of 20 mA. The biased current is programmable by a 3-bit D/A. High current driving capability as well as agile switching speed are achieved by inductive peaking and preemphasis techniques. Operating under a single 3 V power supply, the maximum power consumption is 150 mW. Chip size is 1200μm x 900μm.

Original languageEnglish
Title of host publication2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-68
Number of pages4
ISBN (Electronic)0780373634, 9780780373631
DOIs
StatePublished - 1 Jan 2002
Event3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Taipei, Taiwan
Duration: 6 Aug 20028 Aug 2002

Publication series

Name2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

Conference

Conference3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002
CountryTaiwan
CityTaipei
Period6/08/028/08/02

Keywords

  • Automatic Power Control
  • Laser Driver
  • Preamphasis

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