A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs

Szu Ling Liu*, Yu Chien Huang, Ying Jen Chen, Tsu Chang, Albert Chin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-μm CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BVdss) about 3.5V, therefore restricting the available output power in PA designs. However, by using the special asymmetric NMOSFETs in the proposed PA, the circuit can safely operate at a supply voltage from 1.8 to 2.75V. Under a 2.75V operation, good power performances include a power gain of 20.4 dB, an output 1-dB compression point (Pout, 1dB) of 21.5dBm and a power-added-efficiency (PAE) of 29.6%.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages490-492
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • breakdown voltage
  • PAE
  • power amplifier

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    Liu, S. L., Huang, Y. C., Chen, Y. J., Chang, T., & Chin, A. (2012). A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (pp. 490-492). [6421640] (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2012.6421640