A 23.6ppm/degrees C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from-50 degrees C to 200 degrees C and Supply Voltage Range from 3.9 to 24V

Chenu-Hsing Liao*, Shang-Hsien Yang, Meng-Yin Liao, Kai-Cheng Chung, Neha Kumari, Ke-Horng Chen, Yin-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Ying-Zong Juang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Original languageEnglish
Title of host publication2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC)
PublisherIEEE
Pages72-+
Number of pages3
StatePublished - 2020
EventIEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, Canada
Duration: 16 Feb 202020 Feb 2020

Publication series

NameIEEE International Solid State Circuits Conference
PublisherIEEE
ISSN (Print)0193-6530

Conference

ConferenceIEEE International Solid-State Circuits Conference (ISSCC)
CountryCanada
CitySan Francisco
Period16/02/2020/02/20

Keywords

  • BANDGAP

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