A 23.6ppm/degrees C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from-50 degrees C to 200 degrees C and Supply Voltage Range from 3.9 to 24V

Chenu-Hsing Liao*, Shang-Hsien Yang, Meng-Yin Liao, Kai-Cheng Chung, Neha Kumari, Ke-Horng Chen, Yin-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Ying-Zong Juang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC)
PublisherIEEE
Pages72-+
Number of pages3
StatePublished - 2020
EventIEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, Canada
Duration: 16 Feb 202020 Feb 2020

Publication series

NameIEEE International Solid State Circuits Conference
PublisherIEEE
ISSN (Print)0193-6530

Conference

ConferenceIEEE International Solid-State Circuits Conference (ISSCC)
CountryCanada
CitySan Francisco
Period16/02/2020/02/20

Keywords

  • BANDGAP

Cite this

Liao, C-H., Yang, S-H., Liao, M-Y., Chung, K-C., Kumari, N., Chen, K-H., Lin, Y-H., Lin, S-R., Tsai, T-Y., & Juang, Y-Z. (2020). A 23.6ppm/degrees C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from-50 degrees C to 200 degrees C and Supply Voltage Range from 3.9 to 24V. In 2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC) (pp. 72-+). (IEEE International Solid State Circuits Conference). IEEE.