A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology

Dae Keun Yoon, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A 200 GHz heterodyne image receiver consisting of a mixer integrated with an on-chip voltage controlled oscillator (VCO) has been developed in a 0.18 μm SiGe BiCMOS technology. Incoming signals near 200 GHz are down-converted by the 3rd-order subharmonic mixer with V-band local oscillator (LO) pumping, which is provided by the Colpitts VCO with a stacked common-base buffer. The measured minimum conversion loss is 11.5 dB at 196 GHz with an input 1 db compression point (P-1 dB) of -13 dBm. The fabricated chip with an area of 600 × 400 μm2 including pads consumes total DC power of 25.5 mW. A two-dimensional 200 GHz image acquired with the receiver is presented to demonstrate its imaging application.

Original languageEnglish
Article number6842678
Pages (from-to)557-559
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume24
Issue number8
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Bipolar integrated circuit
  • heterojunction bipolar transistors
  • imaging
  • receivers

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