A 20-GHz Frequency Divider Implemented with Heterojunction Bipolar Transistors

K. C. Wang, Peter M. Asbeck, Mau-Chung Chang, G. J. Sullivan, D. L. Miller

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

This paper reports a high-speed frequency divider implemented with AlGaAs/XnGaAs/GaAs heterojunction bipolar transistors (HBT's). The divide-by-four static frequency divider was fabricated with a fully self-aligned dual-lift-off HBT process. A maximum operating frequency of 20.1 GHz was achieved. This is the highest frequency ever reported for static frequency dividers.

Original languageEnglish
Pages (from-to)383-385
Number of pages3
JournalIEEE Electron Device Letters
Volume8
Issue number9
DOIs
StatePublished - 1 Jan 1987

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