A 1V CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver

Zhe Yang Huang*, Che Cheng Huang, Chun Chieh Chen, Chung-Chih Hung

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0 - 11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1 - 10.6GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than -8.7dB have been achieved.

Original languageEnglish
Title of host publicationProceedings - 20th Anniversary IEEE International SOC Conference
Pages15-18
Number of pages4
DOIs
StatePublished - 1 Dec 2007
Event20th Anniversary IEEE International SOC Conference - Hsinchu, Taiwan
Duration: 26 Sep 200729 Sep 2007

Publication series

NameProceedings - 20th Anniversary IEEE International SOC Conference

Conference

Conference20th Anniversary IEEE International SOC Conference
CountryTaiwan
CityHsinchu
Period26/09/0729/09/07

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  • Cite this

    Huang, Z. Y., Huang, C. C., Chen, C. C., & Hung, C-C. (2007). A 1V CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver. In Proceedings - 20th Anniversary IEEE International SOC Conference (pp. 15-18). [4545416] (Proceedings - 20th Anniversary IEEE International SOC Conference). https://doi.org/10.1109/SOCC.2007.4545416