A 1V 16.9ppm/°C 250nA switched-capacitor CMOS voltage reference

Hong Wei Huang*, Chun Yu Hsieh, Ke-Horng Chen, Sy Yen Kuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

32 Scopus citations

Abstract

A precision voltage reference achieves a 16.9ppm/°C TC for V OUTwhile drawing 250nA from a 1V supply. The reference uses a switched-capacitor technique and is fabricated in a 0.35μm CMOS process. The temperature dependences of carrier mobility and channel-length modulation are completely suppressed. The line sensitivity is 0.76%/V and the PSRRs at 100Hz and 10MHz are -41dB and -17dB, respectively. The die area is 0.049mm 2.

Original languageEnglish
Title of host publication2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC
DOIs
StatePublished - 21 Aug 2008
Event2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 3 Feb 20087 Feb 2008

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume51
ISSN (Print)0193-6530

Conference

Conference2008 IEEE International Solid State Circuits Conference, ISSCC
CountryUnited States
CitySan Francisco, CA
Period3/02/087/02/08

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