A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology

Hyunchol Shin*, Zhiwei Xu, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

42 Scopus citations

Abstract

This paper presents a quadrature VCO that can be reconfigured between 6 and 9 GHz frequency bands. The dual-band VCO comprises a 6-GHz LC VCO, two 1/2-dividers, two mixers, and two 3-GHz notch filters. The 9-GHz output is generated based on a fractional frequency multiplication method by mixing the 6-GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18-μm SiGe BiCMOS technology, shows a fast switching time of 3.6 nsec. The measured VCO phase noises are -106 dBc/Hz and -104 dBc/Hz at 1 MHz offset for 6 and 9-GHz modes, respectively, while draining 10.8 mA from a 1.8-V supply.

Original languageEnglish
Pages71-74
Number of pages4
DOIs
StatePublished - 1 Jan 2002
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: 2 Jun 20024 Jun 2002

Conference

Conference2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CitySeatle, WA
Period2/06/024/06/02

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    Shin, H., Xu, Z., & Chang, M-C. (2002). A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology. 71-74. Paper presented at 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States. https://doi.org/10.1109/RFIC.2002.1011513