A 17-35 GHz broadband, high efficiency PHEMT power amplifier using synthesized transformer matching technique

Pin Cheng Huang*, Zuo-Min Tsai , Kun You Lin, Huei Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P 1 dBof 22 dBm, P sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.

Original languageEnglish
Article number6070995
Pages (from-to)112-119
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number1
DOIs
StatePublished - 1 Jan 2012

Keywords

  • broadband power amplifiers (PAs)
  • GaAs PHEMT
  • Monolithic microwave integrated circuit (MMIC)

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