A 17-35 GHz broadband, high efficiency PHEMT power amplifier using synthesized transformer matching technique

Pin Cheng Huang; Zuo-Min Tsai; Kun You Lin; Huei Wang

doi:10.1109/TMTT.2011.2170091

A 17-35 GHz broadband, high efficiency PHEMT power amplifier using synthesized transformer matching technique

Pin Cheng Huang^*, Zuo-Min Tsai , Kun You Lin, Huei Wang

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P _{1 dB}of 22 dBm, P _sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.

Original language	English
Article number	6070995
Pages (from-to)	112-119
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	60
Issue number	1
DOIs	https://doi.org/10.1109/TMTT.2011.2170091
State	Published - 1 Jan 2012

Keywords

broadband power amplifiers (PAs)
GaAs PHEMT
Monolithic microwave integrated circuit (MMIC)

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10.1109/TMTT.2011.2170091

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abstract = "This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P 1 dBof 22 dBm, P sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.",

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AB - This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P 1 dBof 22 dBm, P sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.

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