A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

Keh Chung Wang; Peter M. Asbeck; Mau-Chung Chang; Randy B. Nubling; Richard L. Pierson; Neng Haung Sheng; Gerard J. Sullivan; Jimmy Yu

doi:10.1109/4.98988

A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, Randy B. Nubling, Richard L. Pierson, Neng Haung Sheng, Gerard J. Sullivan, Jimmy Yu

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT’s, using an ECL/CML circuit approach. The HBT’s have f₁’s and f_max’s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.

Original language	English
Pages (from-to)	1669-1672
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	26
Issue number	11
DOIs	https://doi.org/10.1109/4.98988
State	Published - 1 Jan 1991

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@article{7b4d9c1b1ebd4bfc8fa1c3ec81c3845f,

title = "A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors",

abstract = "This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT{\textquoteright}s, using an ECL/CML circuit approach. The HBT{\textquoteright}s have f1{\textquoteright}s and fmax{\textquoteright}s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.",

author = "Wang, {Keh Chung} and Asbeck, {Peter M.} and Mau-Chung Chang and Nubling, {Randy B.} and Pierson, {Richard L.} and Sheng, {Neng Haung} and Sullivan, {Gerard J.} and Jimmy Yu",

year = "1991",

month = jan,

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doi = "10.1109/4.98988",

language = "English",

volume = "26",

pages = "1669--1672",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors. / Wang, Keh Chung; Asbeck, Peter M.; Chang, Mau-Chung; Nubling, Randy B.; Pierson, Richard L.; Sheng, Neng Haung; Sullivan, Gerard J.; Yu, Jimmy.

In: IEEE Journal of Solid-State Circuits, Vol. 26, No. 11, 01.01.1991, p. 1669-1672.

Research output: Contribution to journal › Article › peer-review

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T1 - A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

AU - Wang, Keh Chung

AU - Asbeck, Peter M.

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AU - Pierson, Richard L.

AU - Sheng, Neng Haung

AU - Sullivan, Gerard J.

AU - Yu, Jimmy

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AB - This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT’s, using an ECL/CML circuit approach. The HBT’s have f1’s and fmax’s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.

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