A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

Keh Chung Wang; Peter M. Asbeck; Mau-Chung Chang; Randy B. Nubling; Richard L. Pierson; Neng Haung Sheng; Gerard J. Sullivan; Jimmy Yu

doi:10.1109/4.98988

A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

Keh Chung Wang, Peter M. Asbeck, Mau-Chung Chang, Randy B. Nubling, Richard L. Pierson, Neng Haung Sheng, Gerard J. Sullivan, Jimmy Yu

Department of Electronics Engineering

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT’s, using an ECL/CML circuit approach. The HBT’s have f₁’s and f_max’s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.

Original language	English
Pages (from-to)	1669-1672
Number of pages	4
Journal	IEEE Journal of Solid-State Circuits
Volume	26
Issue number	11
DOIs	https://doi.org/10.1109/4.98988
State	Published - 1 Jan 1991

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title = "A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors",

abstract = "This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT{\textquoteright}s, using an ECL/CML circuit approach. The HBT{\textquoteright}s have f1{\textquoteright}s and fmax{\textquoteright}s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.",

author = "Wang, {Keh Chung} and Asbeck, {Peter M.} and Mau-Chung Chang and Nubling, {Randy B.} and Pierson, {Richard L.} and Sheng, {Neng Haung} and Sullivan, {Gerard J.} and Jimmy Yu",

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T1 - A 15-GHz Gate Array Implemented with Algaas/Gaas Heterojunction Bipolar Transistors

AU - Wang, Keh Chung

AU - Asbeck, Peter M.

AU - Chang, Mau-Chung

AU - Nubling, Randy B.

AU - Pierson, Richard L.

AU - Sheng, Neng Haung

AU - Sullivan, Gerard J.

AU - Yu, Jimmy

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Y1 - 1991/1/1

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AB - This paper reports a 500-gate array implemented with AlGaAs/GaAs HBT’s, using an ECL/CML circuit approach. The HBT’s have f1’s and fmax’s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps, and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.

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