A 1.5 GHz CMOS low noise amplifier

Ryuichi Fujimoto; Shoji Otaka; Hiroshi Iwai; Hiroshi Tanimoto

A 1.5 GHz CMOS low noise amplifier

Ryuichi Fujimoto^*, Shoji Otaka, Hiroshi Iwai, Hiroshi Tanimoto

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (G_a) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

Original language	English
Pages (from-to)	382-388
Number of pages	7
Journal	IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Volume	E81-A
Issue number	3
State	Published - 1998

Keywords

CMOS technology
High frequency circuit
Inductor
Low noise amplifier
Short channel

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title = "A 1.5 GHz CMOS low noise amplifier",

abstract = "A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.",

keywords = "CMOS technology, High frequency circuit, Inductor, Low noise amplifier, Short channel",

author = "Ryuichi Fujimoto and Shoji Otaka and Hiroshi Iwai and Hiroshi Tanimoto",

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volume = "E81-A",

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TY - JOUR

T1 - A 1.5 GHz CMOS low noise amplifier

AU - Fujimoto, Ryuichi

AU - Otaka, Shoji

AU - Iwai, Hiroshi

AU - Tanimoto, Hiroshi

PY - 1998

Y1 - 1998

N2 - A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

AB - A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

KW - CMOS technology

KW - High frequency circuit

KW - Inductor

KW - Low noise amplifier

KW - Short channel

UR - http://www.scopus.com/inward/record.url?scp=0032024410&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032024410

VL - E81-A

SP - 382

EP - 388

JO - IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

JF - IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

SN - 0916-8508

IS - 3

ER -