A 1.5 GHz CMOS low noise amplifier

Ryuichi Fujimoto*, Shoji Otaka, Hiroshi Iwai, Hiroshi Tanimoto

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

Original languageEnglish
Pages (from-to)382-388
Number of pages7
JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
VolumeE81-A
Issue number3
StatePublished - 1998

Keywords

  • CMOS technology
  • High frequency circuit
  • Inductor
  • Low noise amplifier
  • Short channel

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