A 147 GHz fully differential D-band amplifier design in 65 nm CMOS

Chun Hsing Li, Chih Wei Lai, Chien-Nan Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

This work presents a 147 GHz D-band fully differential amplifier design in 65 nm CMOS. By using a T-network, composed of three inductors, to replace an on-chip transformer, the proposed impedance transformation network can provide an impedance transformation ratio larger than one. So the passive gain can be acquired to increase the amplifier gain. The measured results show that the amplifier can provide power gain of 7.1 dB at 147 GHz. The power consumption is 104 mW from a 2 V supply voltage.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages691-693
Number of pages3
DOIs
StatePublished - 1 Dec 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 5 Nov 20138 Nov 2013

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CountryKorea, Republic of
CitySeoul
Period5/11/138/11/13

Keywords

  • amplifier
  • D-band
  • differential
  • transformer

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