A 1.2-V 5.2-mW 20-30-GHz wideband receiver front-end in 0.18-μm CMOS

Chun Hsing Li*, Chien-Nan Kuo, Ming Ching Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

This paper presents a low-power wideband receiver front-end design using a resonator coupling technique. Inductively coupled resonators, composed of an on-chip transformer and parasitic capacitances from a low-noise amplifier, a mixer, and the transformer itself, not only provide wideband signal transfer, but also realize wideband high-to-low impedance transformation. The coupled resonators also function as a wideband balun to give single-to-differential conversion. Analytic expressions for the coupled resonators with asymmetric loads are presented for design guidelines. The proposed receiver front-end only needs a few passive components so that gain degradation caused by the passive loss is minimized. Hence, power consumption and chip area can be greatly reduced. The chip is implemented in 0.18-μ CMOS technology. The experimental result shows that the - bandwidth can span from 20 to 30 GHz with a peak conversion gain of 18.7 dB. The measured input return loss and third-order intercept point are better than 16.7 dB and - 7.6 dBm - respectively, over the bandwidth. The minimum noise figure is 7.1 dB. The power consumption is only 5.2 mW from a 1.2-V supply. The chip area is only 0.18 μ2.

Original languageEnglish
Article number6341879
Pages (from-to)3502-3512
Number of pages11
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number11
DOIs
StatePublished - 1 Jan 2012

Keywords

  • CMOS
  • Common-gate (CG) low-noise amplifier (LNA)
  • Inductively coupled resonators (ICRs)
  • Low power
  • Low voltage
  • Mixer
  • Resonator coupling network (RCN)
  • Wideband

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