A 12-ns Low-Temperature DRAM

Walter H. Henkels, Nicky C.C. Lu, Wei Hwang, T. V. Rajeevakumar, Robert L. Franch, Keith A. Jenkins, Thomas J. Bucelot, David F. Heidel, Michael J. Immediato

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This paper presents a 12-ns access-time 0.5-Mbit CMOS DRAM operated at liquid nitrogen temperatures. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of SER at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.

Original languageEnglish
Pages (from-to)1414-1422
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 1 Jan 1989

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