A 10Gb/s laser-diode driver with active back-termination in 0.18μm CMOS

Chia-Ming Tsai*, Mao Cheng Chiu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

A low-voltage circuit topology for active back-termination enables low-cost CMOS solutions. A diode-connected NMOS transistor with a feedback network provides back-termination capability. The chip has a modulation current range of 60mA. Measured rise/fall time and jitter are ∼40ps and ∼13ps pp, respectively. The return loss for a 25Ω system is better than 8dB for a frequency range of DC to 8GHz. The IC consumes 240mW from a 1.8V supply.

Original languageEnglish
Title of host publication2008 IEEE International Solid State Circuits Conference - Digest of Technical Papers, ISSCC
DOIs
StatePublished - 21 Aug 2008
Event2008 IEEE International Solid State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 3 Feb 20087 Feb 2008

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume51
ISSN (Print)0193-6530

Conference

Conference2008 IEEE International Solid State Circuits Conference, ISSCC
CountryUnited States
CitySan Francisco, CA
Period3/02/087/02/08

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