Abstract
A 10-bit 200-MS/s pipelined ADC was fabricated using a 90 nm CMOS technology. Switching opamps are used to save power. They are designed for high speed and fast turn-on time. Digital background calibration is used to correct the conversion error caused by the low dc gain of the opamps. The ADC consumes 26 mW from a 1.1 V supply. Its measured DNL and INL are +0.98/0.81 LSB and +1.4/1.5 LSB respectively. Its measured SNDR and SFDR are 55 dB and 67.2 dB respectively. The chip active area is 0.69 mm 2.
Original language | English |
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Pages | 1042-1045 |
Number of pages | 4 |
DOIs | |
State | Published - 28 Sep 2012 |
Event | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: 20 May 2012 → 23 May 2012 |
Conference
Conference | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 |
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Country | Korea, Republic of |
City | Seoul |
Period | 20/05/12 → 23/05/12 |