A 1-V operated polymer vertical transistor with high on/off current ratio

Yu Chiang Chao*, Wu Wei Tsai, Chun Yu Chen, Hsiao-Wen Zan, Hsin-Fei Meng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A 1-V solution-processed polymer vertical transistor with on/off current ratio higher than 2×104 is firstly demonstrated. The channel length is 200 nm. A new structure is used to perform reliable leakage control. Significant impacts of thin film morphology and metal doping effect on the leakage current of organic vertical transistors are firstly observed and recognized as two new leakage phenomena. The complete leakage control and the reliable process in our report enable polymer vertical transistors for real applications.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
StatePublished - 1 Dec 2009
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 7 Dec 20099 Dec 2009

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period7/12/099/12/09

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    Chao, Y. C., Tsai, W. W., Chen, C. Y., Zan, H-W., & Meng, H-F. (2009). A 1-V operated polymer vertical transistor with high on/off current ratio. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest [5424347] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424347