An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.
|Original language||American English|
|State||Published - 2007|
|Event||Progress in Electromagnetics Research Symposium (PIERS 2007) - Beijing, China|
Duration: 26 Mar 2007 → 30 Mar 2007
|Conference||Progress in Electromagnetics Research Symposium (PIERS 2007)|
|Period||26/03/07 → 30/03/07|