A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver

Hui I. Wu, Zi-Hao Hsiung, Christina Jou

Research output: Contribution to conferencePaper

Abstract

An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UNVB LNA achieves simulated power gain > 10dB from 3.3 to 10.1 GHz with only 0.75 V supply using 0.18 mu m CMOS process. Its broadband matching is better than -10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5 mw with output buffer amplifier.
Original languageEnglish
Pages152-+
DOIs
StatePublished - 2007
EventProgress in Electromagnetics Research Symposium (PIERS 2007) - Beijing, China
Duration: 26 Mar 200730 Mar 2007

Conference

ConferenceProgress in Electromagnetics Research Symposium (PIERS 2007)
CountryChina
CityBeijing
Period26/03/0730/03/07

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    Wu, H. I., Hsiung, Z-H., & Jou, C. (2007). A 0.75 VCMOS low-noise amplifier for ultra wide-band wireless receiver. 152-+. Paper presented at Progress in Electromagnetics Research Symposium (PIERS 2007), Beijing, China. https://doi.org/10.2529/PIERS060907041726