A 0.6V 200kHz silicon oscillator with temperature compensation for wireless sensing applications

Chien Ying Yu*, Chen-Yi Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents a silicon oscillator suitable for low-cost and low-power wireless sensing applications. With the comparisons of ring oscillators in different temperature coefficients, the frequency of an internal ring oscillator is estimated and parameterized by a second-order polynomial. Accordingly, the output clock is compensated in a frequency division fashion. The oscillator is implemented in 90-nm CMOS technology with an area of 0.04mm2. Operating at 0.6V, the output frequency is within 200±1kHz over the temperature range of -25°C to 125°C with power consumption of 48μW.

Original languageEnglish
Title of host publication54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
DOIs
StatePublished - 13 Oct 2011
Event54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011 - Seoul, Korea, Republic of
Duration: 7 Aug 201110 Aug 2011

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Conference

Conference54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
CountryKorea, Republic of
CitySeoul
Period7/08/1110/08/11

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