A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

G. Hegazi*, K. Pande, F. Phelleps, Edward Yi Chang, A. Cornfeld, P. Rice, M. Ghahremani, P. Pages

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

47-GHz monolithic microwave integrated circuit (MMIC) power amplifier chips have been developed using 0.35-mm gate-length molecular beam epitaxial (MBE) MESFET technology. The amplifier chips have been assembled with nominal output power of 0.4 W and 15 dB of gain. The saturated output power of this amplifier exceeded 0.5 W. This amplifier has an application as a driver for a monolithic doubler circuit to reliably produce greater than 80 mW of output power at 94 GHz for missile seeker applications.

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalIEEE Microwave and Guided Wave Letters
Volume2
Issue number2
DOIs
StatePublished - 1 Feb 1992

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