A 0.18-μm CMOS CMFB downconversion micromixer with deep n-well technology for LO-RF and LO-IF isolation improvements

Chin-Chun Meng*, S. K. Hsu, T. H. Wu, G. W. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

CMOS deep N-well technology can eliminate the physical effects of NMOS transistors and reduce substrate noise and coupling in order to reach the NMOS channel. These properties result in better LO-IF and LO-RF isolations in a Gilbert micromixer. Two identical 0.18-μm CMOS downconversion micromixers (except at the RF input stage) with deep N-well or without deep N-well are fabricated in adjacent areas of the same wafer for the purpose of isolation comparison. A-37-dB LO-IF and -38-dB LO-RF isolation downconversion micro-mixer with 19-dB conversion gain and IPldB = -20 dBm and IIP3 = -13 dBm when RF = 2.4 CHz and LO = 2.25 GHz is demonstrated here using 0.18-μm-deep N-well CMOS technology. On the other hand, a downconversion micromixer without deep N-well has almost identical power performance but achieves only -20-dB LO-IF isolation and -21-dB LO-RF isolation.

Original languageEnglish
Pages (from-to)168-170
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume45
Issue number2
DOIs
StatePublished - 20 Apr 2005

Keywords

  • CMFB
  • CMOS
  • Deep N-well
  • Mixer

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