9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film

Chia Hua Ho*, Cho Lun Hsu, Chun Chi Chen, Jan Tsai Liu, Cheng San Wu, Chien Chao Huang, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

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