9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film

Chia Hua Ho*, Cho Lun Hsu, Chun Chi Chen, Jan Tsai Liu, Cheng San Wu, Chien Chao Huang, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

Abstract

Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (Iprog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WOx and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

Fingerprint Dive into the research topics of '9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO<sub>x</sub> film'. Together they form a unique fingerprint.

  • Cite this

    Ho, C. H., Hsu, C. L., Chen, C. C., Liu, J. T., Wu, C. S., Huang, C. C., Hu, C-M., & Yang, F. L. (2010). 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703389] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703389