99.3% Efficiency of three-phase inverter for motor drive using GaN-based gate injection transistors

Tatsuo Morita*, Satoshi Tamura, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

135 Scopus citations

Abstract

In this paper, we present a successful operation of Gallium Nitride(GaN)-based three-phase inverter with high efficiency of 99.3% for driving motor at 900W under the carrier frequency of 6kHz. This efficiency well exceeds the value by IGBT (Insulated Gate Bipolar Transistor). This demonstrates that GaN has a great potential for power switching application competing with SiC. Fully reduced on-state resistance in a new normally-off GaN transistor called Gate Injection Transistor (GIT) greatly helps to increase the efficiency. In addition, use of the bidirectional operation of the lateral and compact GITs with synchronous gate driving, the inverter is operated free from fly-wheel diodes which have been connected in parallel with IGBTs in a conventional inverter system.

Original languageEnglish
Title of host publication2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
Pages481-484
Number of pages4
DOIs
StatePublished - 13 May 2011
Event26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 - Fort Worth, TX, United States
Duration: 6 Mar 201110 Mar 2011

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
CountryUnited States
CityFort Worth, TX
Period6/03/1110/03/11

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