980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

Shun-Tung Yen*, Kuo-Jui Lin, Der Cherng Liu, Chia-Ming Tsai, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

980 NM InGaAs/AlGaAs lasers have been developed with a specially designed cladding structure. For a 2.5 μm wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13° and a lateral divergence of 8°. The threshold current can remain acceptably low. Additionally, with another design, a record small vertical far field angle of 11° has been obtained.

Original languageEnglish
Pages (from-to)13-14
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr
Duration: 13 Oct 199618 Oct 1996

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