980 NM InGaAs/AlGaAs lasers have been developed with a specially designed cladding structure. For a 2.5 μm wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13° and a lateral divergence of 8°. The threshold current can remain acceptably low. Additionally, with another design, a record small vertical far field angle of 11° has been obtained.
|Number of pages||2|
|Journal||Conference Digest - IEEE International Semiconductor Laser Conference|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr|
Duration: 13 Oct 1996 → 18 Oct 1996