850-nm VCSELs With p-Type δ-Doping in the Active Layers for Improved High-Speed and High-Temperature Performance

Kai Lun Chi, Dan Hua Hsieh, Jia Liang Yen, Xin Nan Chen, Jye-Hong Chen, Hao-Chung Kuo, Ying Jay Yang, Jin Wei Shi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/2 λ asymmetric cavity design, which can let the internal transit time of injected carriers be as short as that of 1/2 λ cavity design and further improve its performance in terms of speed and output power for high single-mode operation. Our proposed VCSEL structure with p-type doping shows superior modulation speed with an output power comparable with that of the un-doped reference device under room temperature operation. Furthermore, when the operating temperature reaches 85 °C, there is a significant improvement in both the modulation speed and maximum power of the p-doped structures. According to our simulation, this can be attributed to the change in the quasi-Fermi levels of the injected carriers after the addition of p-doping in the active layers, which minimizes the electron leakage under high-temperature operation.

Original languageEnglish
Article number7571122
JournalIEEE Journal of Quantum Electronics
Volume52
Issue number11
DOIs
StatePublished - 1 Nov 2016

Keywords

  • Semiconductor lasers
  • vertical cavity surface emitting lasers

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