We report ultra high voltage AlGaN/GaN heterojunction transistors (UFETs) on sapphire with thick poly-AIN passivation. Extremely high blocking voltage of 8300V is achieved while maintaining relative low specific on-state resistance (Ron•A) of 186mΩ•cm2. Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2007|
|Event||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
Duration: 10 Dec 2007 → 12 Dec 2007