8300V blocking voltage AlGaN/GaN power HFET with thick poly-AIN passivation

Yasuhiro Uemoto*, Daisuke Shibata, Manabu Yanagihara, Hidetoshi Ishida, Hisayoshi Matsuo, Shuichi Nagai, Nagaraj Batta, Ming Li, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

115 Scopus citations

Abstract

We report ultra high voltage AlGaN/GaN heterojunction transistors (UFETs) on sapphire with thick poly-AIN passivation. Extremely high blocking voltage of 8300V is achieved while maintaining relative low specific on-state resistance (Ron•A) of 186mΩ•cm2. Via-holes through sapphire at the drain electrodes enable very efficient layout of the lateral HFET array as well as better heat dissipation.

Original languageEnglish
Article number4419085
Pages (from-to)861-864
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

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