83% boost in external quantum efficiency of large-area 380 nm flip-chip light-emitting diodes by incorporating a self-textured oxide mask structure

Wen Yu Lin*, Kun Ching Shen, Dong Sing Wuu, Shih Cheng Huang, Ray-Hua Horng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The enhanced output of 380nm flip-chip light-emitting diode is demonstrated by inserting self-textured oxide structures, which was attributed the oxide structure existence not only reduces dislocation density but also intensifies the light extraction.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
DOIs
StatePublished - 6 Dec 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 6 May 201211 May 2012

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period6/05/1211/05/12

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    Lin, W. Y., Shen, K. C., Wuu, D. S., Huang, S. C., & Horng, R-H. (2012). 83% boost in external quantum efficiency of large-area 380 nm flip-chip light-emitting diodes by incorporating a self-textured oxide mask structure. In 2012 Conference on Lasers and Electro-Optics, CLEO 2012 [6326362] (2012 Conference on Lasers and Electro-Optics, CLEO 2012). https://doi.org/10.1364/CLEO_AT.2012.JTh2A.69