77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process

Kuan Ting Lai*, Kun Long Wu, Shu-I Hu, Christina F. Jou

*Corresponding author for this work

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

This paper reports our 77GHz power-amplifier designs using WIN 0.1μm GaAs pHEMT process provided by the commercial WIN foundry. The first two stages of the power amplifier is made of common-source transistors for gain amplification, and then followed by two- and four-paralleled transistors where the 3dB two-way Wilkinson power splitters/combiners for large output power delivery are used. All the by-pass capacitors for drain and gate biases have been optimized to have small series impedance at W-band. The input DC-blocking capacitor is made coupled lines, which also functions as tuning circuit. With 2.5V and 350mA drain bias, the small-signal gain is 12dB, as measured on-wafer at room temperature; the output-referred 1dB compression point is 6dBm. With 3dBm input power, the saturated output power is around 8.6dBm. Good input- and output-port matching has also been observed. The chip size is 1000×2500μm2and it consumes 875mW.

Original languageEnglish
DOIs
StatePublished - 17 Oct 2014
Event31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014 - Beijing, China
Duration: 16 Aug 201423 Aug 2014

Conference

Conference31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014
CountryChina
CityBeijing
Period16/08/1423/08/14

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    Lai, K. T., Wu, K. L., Hu, S-I., & Jou, C. F. (2014). 77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process. Paper presented at 31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014, Beijing, China. https://doi.org/10.1109/URSIGASS.2014.6929428