77GHz power amplifier design using WIN 0.1μm GaAs pHEMT process

Kuan Ting Lai*, Kun Long Wu, Shu-I Hu, Christina F. Jou

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

This paper reports our 77GHz power-amplifier designs using WIN 0.1μm GaAs pHEMT process provided by the commercial WIN foundry. The first two stages of the power amplifier is made of common-source transistors for gain amplification, and then followed by two- and four-paralleled transistors where the 3dB two-way Wilkinson power splitters/combiners for large output power delivery are used. All the by-pass capacitors for drain and gate biases have been optimized to have small series impedance at W-band. The input DC-blocking capacitor is made coupled lines, which also functions as tuning circuit. With 2.5V and 350mA drain bias, the small-signal gain is 12dB, as measured on-wafer at room temperature; the output-referred 1dB compression point is 6dBm. With 3dBm input power, the saturated output power is around 8.6dBm. Good input- and output-port matching has also been observed. The chip size is 1000×2500μm2and it consumes 875mW.

Original languageEnglish
DOIs
StatePublished - 17 Oct 2014
Event31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014 - Beijing, China
Duration: 16 Aug 201423 Aug 2014

Conference

Conference31st General Assembly and Scientific Symposium of the International Union of Radio Science, URSI GASS 2014
CountryChina
CityBeijing
Period16/08/1423/08/14

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