77-110 GHz 65-nm CMOS power amplifier design

Kun Long Wu*, Kuan Ting Lai, Shu-I Hu, Christina F. Jou, Dow Chih Niu, Yu Shao Shiao

*Corresponding author for this work

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

This paper details the development of our millimeter-wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77-110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below-10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band.

Original languageEnglish
Article number6807854
Pages (from-to)391-399
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Volume4
Issue number3
DOIs
StatePublished - 1 Jan 2014

Keywords

  • CMOS
  • impedance transformation
  • millimeter-wave
  • power amplifier
  • power combining
  • wideband

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    Wu, K. L., Lai, K. T., Hu, S-I., Jou, C. F., Niu, D. C., & Shiao, Y. S. (2014). 77-110 GHz 65-nm CMOS power amplifier design. IEEE Transactions on Terahertz Science and Technology, 4(3), 391-399. [6807854]. https://doi.org/10.1109/TTHZ.2014.2315451