77-110 GHz 65-nm CMOS power amplifier design

Kun Long Wu*, Kuan Ting Lai, Shu-I Hu, Christina F. Jou, Dow Chih Niu, Yu Shao Shiao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


This paper details the development of our millimeter-wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77-110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below-10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band.

Original languageEnglish
Article number6807854
Pages (from-to)391-399
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Issue number3
StatePublished - 1 Jan 2014


  • CMOS
  • impedance transformation
  • millimeter-wave
  • power amplifier
  • power combining
  • wideband

Fingerprint Dive into the research topics of '77-110 GHz 65-nm CMOS power amplifier design'. Together they form a unique fingerprint.

Cite this