73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters

Emmanuel F. Crabbé, James H. Comfort, Wai Lee, John D. Cressler, Bernard S. Meyerson, Andrew C. Megdanis, Jack Y.C. Sun, Johannes M.C. Stork

Research output: Contribution to journalArticlepeer-review

51 Scopus citations


We report a reduced thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 [formula omitted]. Minimum NTL and ECL gate delays of 28 and 34 ps, respectively, were obtained with these devices.

Original languageEnglish
Pages (from-to)259-261
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 1992

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