65nm CMOS receiver with 4.2dB NF and 66dB gain for 60GHz applications

N. Y. Wang, H. Wu, J. Y C Liu, Mau-Chung Chang

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A direct conversion receiver for 60GHz applications is fabricated in 65nm CMOS. It consists of three low-noise amplifier gain stages, an RF mixer, a lowpass filter and a three-stage programmable gain amplifier. An overall minimum noise figure (NF) of 4.2dB and maximum gain of 66dB is achieved by the receiver occupying a core area of 0.26mm2 while drawing 36mA of current from a 1V supply.

Original languageEnglish
Pages (from-to)15-17
Number of pages3
JournalElectronics Letters
Volume47
Issue number1
DOIs
StatePublished - 6 Jan 2011

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