63-75 GHz fT SiGe-base heterojunction bipolar technology

G. L. Patton*, J. H. Comfort, B. S. Meyerson, E. F. Crabbé, G. J. Scilla, E. De Frésart, J. M.C. Stork, J. Y.C. Sun, D. L. Harame, J. Burghartz

*Corresponding author for this work

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Abstract

Experimental results for maximum cut-off frequency (fT) values of 75 and 52 GHz were achieved for SiGe-base and Si-base bipolar transistors with intrinsic base sheet resistances in the 10-17 kΩ/square range. These results extend the speed of silicon bipolar devices into a regime previously reserved to GaAs and other compound semiconductor technologies. Excellent junction characteristics were also obtained for devices as large as 100000 μm2 and for current densities as high as 106 A/cm 2. The performance levels obtained for the SiGe transistors, which contain less than 10% germanium in the base, represent almost a factor of two increase in the speed of a Si bipolar transistor. These results demonstrate the significant performance advantage offered by SiGe heterojunction technology.

Original languageEnglish
Article number5727462
Pages (from-to)49-50
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1990
Event1990 Symposium on VLSI Technology - Honolulu, HI, United States
Duration: 4 Jun 19907 Jun 1990

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    Patton, G. L., Comfort, J. H., Meyerson, B. S., Crabbé, E. F., Scilla, G. J., De Frésart, E., Stork, J. M. C., Sun, J. Y. C., Harame, D. L., & Burghartz, J. (1990). 63-75 GHz fT SiGe-base heterojunction bipolar technology. Digest of Technical Papers - Symposium on VLSI Technology, 49-50. [5727462]. https://doi.org/10.1109/VLSIT.1990.111002