62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V

C. Yoshino*, K. Inou, S. Matsuda, H. Nakajima, Y. Tsuboi, H. Naruse, H. Sugaya, Y. Katsumata, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Optimization of fmax and Higher Early voltage (VA), the two important factors in the design of a circuit, is investigated by changing W epi and NB values of low temperature LP-CVD epitaxial base. It is found that there are optimum conditions that can realize concurrent extremely high fmax value. The highest fmax value of 62.8GHz at a collector current of 1.7mA is achieved. Additionally, high BV CEO at 4.7V, high VA of 85.7V and low PBI value of 8.5 kΩ/sq are realized.

Original languageEnglish
Pages (from-to)131-132
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 6 Jun 19958 Jun 1995

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