62.3: A novel nanostructure enhanced Pi-cell for transition-rate improvement

Szu Fen F. Chen*, Yu Yun Chang, Huang-Ming Chen, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

It is well known that a Pi-cell must be operated in bend state transited from splay state. Before starting state transition, the nucleation must be happened uniformly to whole active area in a Pi-cell. In this study, Nanostructure Enhanced Pi-cell (NE-Pi-cell) was proposed. Not only the random distribution of silicon oxide nano-particles was investigated for decreasing the transition time, but also the limitation of increasing nano-particle density was also studied well. The reduction rates of splay-to-bend and twist-to-splay transition time were over 99.9% with nanostructure surfaces. However, the response time and V-T curve remained the same as un-treated Pi-cell.

Original languageEnglish
Pages (from-to)932-934
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume41 1
DOIs
StatePublished - 1 May 2010

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