62.3: A novel nanostructure enhanced Pi-cell for transition-rate improvement

Szu Fen F. Chen*, Yu Yun Chang, Huang-Ming Chen, Han Ping D. Shieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is well known that a Pi-cell must be operated in bend state transited from splay state. Before starting state transition, the nucleation must be happened uniformly to whole active area in a Pi-cell. In this study, Nanostructure Enhanced Pi-cell (NE-Pi-cell) was proposed. Not only the random distribution of silicon oxide nano-particles was investigated for decreasing the transition time, but also the limitation of increasing nano-particle density was also studied well. The reduction rates of splay-to-bend and twist-to-splay transition time were over 99.9% with nanostructure surfaces. However, the response time and V-T curve remained the same as un-treated Pi-cell.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages932-934
Number of pages3
DOIs
StatePublished - 1 Dec 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

Publication series

Name48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Volume2

Conference

Conference48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period23/05/1028/05/10

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