The superior performance qualities of indium phosphide-based high electron mobility transistor (HEMT) structures have already been established with discrete devices. In this paper, the first V-band monolithic millimeter-wave ICs made with this material system are reported. Results are presented for a monolithic amplifier with a 9-dB gain at 62.5 GHz. These circuits have all the necessary components for a high-performance amplifier technology including quarter-micron EBL (electron beam lithography) defined gates, MIM (metal insulator metal) capacitors, air-bridge metal crossovers, and plated-thru-substrate vias to the ground plane.
|Number of pages||3|
|State||Published - 1 Oct 1990|
|Event||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA|
Duration: 7 Oct 1990 → 10 Oct 1990
|Conference||12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC|
|City||New Orleans, LA, USA|
|Period||7/10/90 → 10/10/90|