62 GHz monolithic multistage indium phosphide-based HEMT amplifier

E. Sovero*, D. Deakin, W. J. Ho, G. D. Robinson, C. W. Farley, J. A. Higgins, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The superior performance qualities of indium phosphide-based high electron mobility transistor (HEMT) structures have already been established with discrete devices. In this paper, the first V-band monolithic millimeter-wave ICs made with this material system are reported. Results are presented for a monolithic amplifier with a 9-dB gain at 62.5 GHz. These circuits have all the necessary components for a high-performance amplifier technology including quarter-micron EBL (electron beam lithography) defined gates, MIM (metal insulator metal) capacitors, air-bridge metal crossovers, and plated-thru-substrate vias to the ground plane.

Original languageEnglish
Pages169-171
Number of pages3
StatePublished - 1 Oct 1990
Event12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA
Duration: 7 Oct 199010 Oct 1990

Conference

Conference12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
CityNew Orleans, LA, USA
Period7/10/9010/10/90

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